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Application of the multicomponent Falicov-Kimball model to intermediate-valence materials: YbInCu4 and EuNi2(Si1-xGex)2

Identifieur interne : 00D996 ( Main/Repository ); précédent : 00D995; suivant : 00D997

Application of the multicomponent Falicov-Kimball model to intermediate-valence materials: YbInCu4 and EuNi2(Si1-xGex)2

Auteurs : RBID : Pascal:03-0226411

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Abstract

We develop a formalism to solve the multicomponent Falicov-Kimball model with dynamical mean-field theory, allowing for all possible crystal-field couplings (including spin-orbit coupling). We apply these techniques to solve models of the intermediate-valence transition [as seen in YbInCu4 and EuNi2(Si1-xGex)2] in the simple limit of no crystal field or spin-orbit coupling. We show results for the uniform spin susceptibility, the average localized electron concentration, and transport properties. We also investigate the metamagnetic transition.

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Pascal:03-0226411

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<title xml:lang="en" level="a">Application of the multicomponent Falicov-Kimball model to intermediate-valence materials: YbInCu
<sub>4</sub>
and EuNi
<sub>2</sub>
(Si
<sub>1-x</sub>
Ge
<sub>x</sub>
)
<sub>2</sub>
</title>
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<name sortKey="Freericks, J K" uniqKey="Freericks J">J. K. Freericks</name>
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<s1>Department of Physics, Georgetown University</s1>
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<s1>Institute of Physics, P.O. Box 304</s1>
<s2>10001 Zagreb</s2>
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<term>Carrier density</term>
<term>Carrier mobility</term>
<term>Copper alloys</term>
<term>Crystal field</term>
<term>Dynamic model</term>
<term>Europium alloys</term>
<term>Indium alloys</term>
<term>Intermediate valence</term>
<term>Magnetic susceptibility</term>
<term>Metamagnetism</term>
<term>Nickel alloys</term>
<term>Silicon alloys</term>
<term>Spin-orbit interactions</term>
<term>Ternary alloys</term>
<term>Theoretical study</term>
<term>Ytterbium alloys</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Etude théorique</term>
<term>Valence intermédiaire</term>
<term>Modèle dynamique</term>
<term>Champ cristallin</term>
<term>Interaction spin orbite</term>
<term>Susceptibilité magnétique</term>
<term>Densité porteur charge</term>
<term>Mobilité porteur charge</term>
<term>Métamagnétisme</term>
<term>Alliage ternaire</term>
<term>Indium alliage</term>
<term>Cuivre alliage</term>
<term>Ytterbium alliage</term>
<term>Europium alliage</term>
<term>Nickel alliage</term>
<term>Silicium alliage</term>
<term>Alliage YbInCu</term>
<term>Cu In Yb</term>
<term>Alliage EuNiSiGe</term>
<term>Eu Ge Ni Si</term>
<term>7128</term>
<term>7510D</term>
<term>7530M</term>
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<div type="abstract" xml:lang="en">We develop a formalism to solve the multicomponent Falicov-Kimball model with dynamical mean-field theory, allowing for all possible crystal-field couplings (including spin-orbit coupling). We apply these techniques to solve models of the intermediate-valence transition [as seen in YbInCu
<sub>4</sub>
and EuNi
<sub>2</sub>
(Si
<sub>1-x</sub>
Ge
<sub>x</sub>
)
<sub>2</sub>
] in the simple limit of no crystal field or spin-orbit coupling. We show results for the uniform spin susceptibility, the average localized electron concentration, and transport properties. We also investigate the metamagnetic transition.</div>
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<s1>Application of the multicomponent Falicov-Kimball model to intermediate-valence materials: YbInCu
<sub>4</sub>
and EuNi
<sub>2</sub>
(Si
<sub>1-x</sub>
Ge
<sub>x</sub>
)
<sub>2</sub>
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<s0>We develop a formalism to solve the multicomponent Falicov-Kimball model with dynamical mean-field theory, allowing for all possible crystal-field couplings (including spin-orbit coupling). We apply these techniques to solve models of the intermediate-valence transition [as seen in YbInCu
<sub>4</sub>
and EuNi
<sub>2</sub>
(Si
<sub>1-x</sub>
Ge
<sub>x</sub>
)
<sub>2</sub>
] in the simple limit of no crystal field or spin-orbit coupling. We show results for the uniform spin susceptibility, the average localized electron concentration, and transport properties. We also investigate the metamagnetic transition.</s0>
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<s5>19</s5>
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<s0>Nickel alliage</s0>
<s5>20</s5>
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<s5>20</s5>
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<s5>21</s5>
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<s0>Silicon alloys</s0>
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<s4>2002-07-01</s4>
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